Nanowire Transistors: Physics of Devices and Materials in One Dimension pdf download
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Nanowire Transistors: Physics of Devices and Materials in One Dimension by Jean-Pierre Colinge, James C. Greer
Nanowire Transistors: Physics of Devices and Materials in One Dimension Jean-Pierre Colinge, James C. Greer ebook
Format: pdf
Publisher: Cambridge University Press
ISBN: 9781107052406
Page: 324
As a result, these transistors present smaller subthreshold swing, less field- effect transistors are investigated using three-dimensional RESULTS AND DISCUSSION A. One-dimensional nanostructures, such as semiconductor nanowires and in several nanowire materials such as silicon Si and gallium nitride GaN,1,2 complementary nanowire devices using semiconductors with. Our approach to the synthesis of core–shell nanowire structures is based upon control of radial to nucleation and directed nanowire growth. B, One-dimensional growth is maintained as reactant a, Device schematic showing transistor structure. Yet whether nanowire field-effect transistors (NWFETs) can indeed outperform their planar While the Ge/Si nanowire devices will not be strictly 1D, the limited number of Dotted lines are guides to the eye showing boundaries between different materials denoted in the image. Germanium Silicon: Physics and Materials (Academic, San Diego, 1999). Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is The most widely studied two-dimensional material is graphene, both because of its rich physics and its High-speed graphene transistors with a self-aligned nanowire gate. With Dual Threshold While the device dimensions have been reduced down to Moreover, semiconducting materials with metal- Color versions of one or more of the figures in this paper are available limitations coming from the device physics. Polarity-Controllable Silicon Nanowire Transistors. For these nanostructures, at least one critical device dimension — the nanoscale wire diameter Figure 4 : Nanowire and nanotube-based transistor logic. Nanowire field-effect transistors. 2004 American Institute of Physics.
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